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| Datasheet File OCR Text: |
| geometry process details principal device types cmpd4150 bas56 gross die per 4 inch wafer 63,904 process CPD93V switching diode high current switching diode chip process epitaxial planar die size 12.8 x 12.8 mils die thickness 7.1 mils anode bonding pad area 5.1 x 5.1 mils top side metalization al - 30,000? back side metalization au-as - 10,000? www.centralsemi.com r2 (22-march 2010)
process CPD93V typical electrical characteristics www.centralsemi.com r2 (22-march 2010) |
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